IRFP9140NPBF
ActivePOWER MOSFET, P CHANNEL, 100 V, 23 A, 0.117 OHM, TO-247AC, THROUGH HOLE
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IRFP9140NPBF
ActivePOWER MOSFET, P CHANNEL, 100 V, 23 A, 0.117 OHM, TO-247AC, THROUGH HOLE
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Technical Specifications
Parameters and characteristics for this part
| Specification | IRFP9140NPBF |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 23 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 97 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 140 W |
| Rds On (Max) @ Id, Vgs | 117 mOhm |
| Supplier Device Package | TO-247AC |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IRFP9140 Series
The IRFP9140NPBF is a -100V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.