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Description

General part information

TSM2N60ECH C5G

MOSFET N-CHANNEL 600V 2A TO251

Technical Specifications

Parameters and characteristics for this part

SpecificationTSM2N60ECH C5G
Current - Continuous Drain (Id) (Tc)2 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)9.5 nC
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-251-3 Short Leads, TO-251AA, IPAK
Package NameTO-251 (IPAK)
Power Dissipation (Max)52.1 W
Rds On (Max)4 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)5 V

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