IRF7757TRPBF

Obsolete

Infineon Technologies

MOSFET 2N-CH 20V 4.8A 8TSSOP

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Obsolete

Infineon Technologies

MOSFET 2N-CH 20V 4.8A 8TSSOP

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7757TRPBF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	4.8 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	23 nC
Input Capacitance (Ciss) (Max) @ Vds	1340 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-TSSOP
Package / Case [custom]	0.173 "
Package / Case [custom]	4.4 mm
Power - Max [Max]	1.2 W
Rds On (Max) @ Id, Vgs [Max]	35 mOhm
Supplier Device Package	8-TSSOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.2 V

Part	Mounting Type	Package / Case	Package / Case [custom]	Package / Case [custom]	Technology	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Power - Max [Max]	Supplier Device Package	Vgs(th) (Max) @ Id
Infineon Technologies IRF7757TRPBF	Surface Mount	8-TSSOP	0.173 "	4.4 mm	MOSFET (Metal Oxide)	1340 pF	-55 °C	150 °C	4.8 A	23 nC	2 N-Channel (Dual)	Logic Level Gate	20 V	35 mOhm	1.2 W	8-TSSOP	1.2 V
Infineon Technologies IRF7757TR	Surface Mount	8-TSSOP	0.173 "	4.4 mm	MOSFET (Metal Oxide)	1340 pF	-55 °C	150 °C	4.8 A	23 nC	2 N-Channel (Dual)	Logic Level Gate	20 V	35 mOhm	1.2 W	8-TSSOP	1.2 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$