Description
General part information
IPT60R024CM8XTMA1
The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7. It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further improved by 12% over CFD7, reverse recovery charge (Qrr) is 3% lower compared to the CFD7, as well as the lowest reverse recovery time (trr) in the market.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPT60R024CM8XTMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 103 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 122 nC, 122 nC |
| Input Capacitance (Ciss) (Max) | 5382 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerSFN |
| Package Name | PG-HSOF-8-2 |
| Power Dissipation (Max) | 543 W |
| Rds On (Max) | 24 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4.7 V |
Pricing
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