2N5551TF
ActiveON Semiconductor
TRANSISTOR,BJT,NPN,160V V(BR)CEO,600MA I(C),TO-92 ROHS COMPLIANT: YES
2N5551TF
ActiveON Semiconductor
TRANSISTOR,BJT,NPN,160V V(BR)CEO,600MA I(C),TO-92 ROHS COMPLIANT: YES
Description
General part information
2N5551TF
The High Voltage NPN Bipolar Transistor is designed for general purpose switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N5551TF |
|---|---|
| Current - Collector (Ic) (Max) | 0.6 mA |
| Current - Collector Cutoff (Max) | 50 nA |
| DC Current Gain (hFE) (Min) | 80 |
| Frequency - Transition | 100 MHz |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-92-3 (TO-226AA) Formed Leads, TO-226-3 |
| Package Name | TO-92-3 |
| Power - Max | 625 mW |
| Transistor Type | NPN |
| Vce Saturation (Max) | 200 mV |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
Pricing
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CAD
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Documents
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