DMTH4M75LPSW-13
ActiveDiodes Inc
40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
DMTH4M75LPSW-13
ActiveDiodes Inc
40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Description
General part information
DMTH4M75LPSW-13
This new generation MOSFET is designed to minimize RDS(ON)yet maintain superior switching performance. This device is ideal for use in power management and load switches.
Technical Specifications
Parameters and characteristics for this part
| Specification | DMTH4M75LPSW-13 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 337 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 111 nC |
| Input Capacitance (Ciss) (Max) | 9308 pF |
| Mounting Type | Wettable Flank, Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PowerDI5060-8 (Type UX) |
| Power Dissipation (Max) | 150 W, 3.5 W |
| Rds On (Max) | 0.75 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3 V |
Pricing
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