2SK4151TZ-E

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Renesas Electronics Corporation

NCH SINGLE POWER MOSFET 150V 1A 1950MOHM TO-92(1)

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Renesas Electronics Corporation

NCH SINGLE POWER MOSFET 150V 1A 1950MOHM TO-92(1)

Technical Specifications

Parameters and characteristics for this part

Specification	2SK4151TZ-E

Current - Continuous Drain (Id) @ 25°C	1 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	3.5 nC
Input Capacitance (Ciss) (Max) @ Vds	98 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power Dissipation (Max)	750 mW
Rds On (Max) @ Id, Vgs	1.95 Ohm
Supplier Device Package	TO-92
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V

Nch Single Power Mosfet 150V 1A 1950Mohm To-92(1)

Part	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Mounting Type	Operating Temperature	Package / Case	Technology	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)
Renesas Electronics Corporation 2SK4151TZ-E	4 V	2.5 V	1.95 Ohm	1 A	10 V	Through Hole	150 °C	TO-226-3, TO-92-3	MOSFET (Metal Oxide)	98 pF	N-Channel	TO-92	3.5 nC	750 mW	150 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

The 2SK4151 is a Nch Single Power Mosfet 150V 1A 1950Mohm To-92(1).

Technical documentation and resources