MBRF2060HC0G

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Taiwan Semiconductor Corporation

DIODE SCHOTTKY 60V 20A ITO220AC

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Taiwan Semiconductor Corporation

DIODE SCHOTTKY 60V 20A ITO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	MBRF2060HC0G

Current - Reverse Leakage @ Vr	200 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2 Full Pack
Qualification	AEC-Q101
Speed	200 mA, 500 ns
Supplier Device Package	ITO-220AC
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	60 V
Voltage - Forward (Vf) (Max) @ If	820 mV

Part	Voltage - Forward (Vf) (Max) @ If	Speed	Technology	Qualification	Voltage - DC Reverse (Vr) (Max) [Max]	Grade	Mounting Type	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Supplier Device Package	Diode Configuration	Current - Average Rectified (Io) (per Diode)
Taiwan Semiconductor Corporation MBRF2060HC0G	820 mV	200 mA 500 ns	Schottky	AEC-Q101	60 V	Automotive	Through Hole	200 µA	150 °C	-55 °C	TO-220-2 Full Pack	ITO-220AC
Taiwan Semiconductor Corporation MBRF2060 C0G	820 mV	200 mA 500 ns	Schottky		60 V		Through Hole	200 µA	150 °C	-55 °C	TO-220-2 Full Pack	ITO-220AC
Taiwan Semiconductor Corporation MBRF2060CT	950 mV	200 mA 500 ns	Schottky		60 V		Through Hole	100 µA	150 °C	-55 °C	TO-220-3 Full Pack Isolated Tab	ITO-220AB	1 Pair Common Cathode	20 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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General part information

Diode 60 V 20A Through Hole ITO-220AC

Technical documentation and resources