BAV20
ObsoleteON Semiconductor
DIODE GEN PURP 200V 200MA DO35
BAV20
ObsoleteON Semiconductor
DIODE GEN PURP 200V 200MA DO35
Description
General part information
BAV20
Diode 200 V 200mA Through Hole DO-35
Technical Specifications
Parameters and characteristics for this part
| Specification | BAV20 |
|---|---|
| Capacitance | 5 pF |
| Current - Average Rectified (Io) | 200 mA |
| Current - Reverse Leakage | 100 nA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction (Max) | 175 °C |
| Package / Case | Axial, DO-35, DO-204AH |
| Package Name | DO-35 |
| Reverse Recovery Time (trr) | 50 ns |
| Speed | Any Speed, Small Signal |
| Speed - Fast Recovery (Maximum) | 200 mA |
| Speed - Small Signal Current Max | 200 mA, 200 mA, 200 mA |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) | 1.25 V |
Pricing
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CAD
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Documents
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