GE17042BCA3

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GE Aerospace

SIC 2N-CH 1700V 425A MODULE

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GE Aerospace

SIC 2N-CH 1700V 425A MODULE

Technical Specifications

Parameters and characteristics for this part

Specification	GE17042BCA3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	425 A
Drain to Source Voltage (Vdss)	1.7 kV
Drain to Source Voltage (Vdss)	1700 V
Gate Charge (Qg) (Max) @ Vgs	1207 nC
Input Capacitance (Ciss) (Max) @ Vds	29100 pF
Mounting Type	Chassis Mount
Operating Temperature	175 °C
Package / Case	Module
Power - Max [Max]	1250 W
Rds On (Max) @ Id, Vgs	4.45 mOhm
Supplier Device Package	Module
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	4.5 V

SIC 2N-CH 1700V 425A MODULE

Part	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Supplier Device Package	Configuration	Package / Case	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Vgs(th) (Max) @ Id
GE Aerospace GE17042BCA3	29100 pF	Chassis Mount	Module	2 N-Channel (Dual)	Module	4.45 mOhm	1.7 kV	1700 V	1207 nC	1250 W	Silicon Carbide (SiC)	425 A	175 °C	4.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 1700V (1.7kV) 425A (Tc) 1250W Chassis Mount Module

Technical documentation and resources