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BCP53T1G

BCP53T1G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, GENERAL PURPOSE, PNP, 80 V, 1.5 A, 1.5 W, SOT-223, SURFACE MOUNT

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BCP53T1G

BCP53T1G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, GENERAL PURPOSE, PNP, 80 V, 1.5 A, 1.5 W, SOT-223, SURFACE MOUNT

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Description

General part information

BCP53T1G

The BCP53T1G is a 80V PNP bipolar Epitaxial Transistor designed for general purpose amplifier applications. It is housed in the package which is designed for low power surface-mount applications. The package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die.

Technical Specifications

Parameters and characteristics for this part

SpecificationBCP53T1G
Current - Collector (Ic) (Max)1.5 A
Current - Collector Cutoff (Max)100 nA
DC Current Gain (hFE) (Min)40
Frequency - Transition50 MHz
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-65 °C
Package / CaseTO-261AA, TO-261-4
Package NameSOT-223 (TO-261)
Power - Max1.5 W
Transistor TypePNP
Vce Saturation (Max)500 mV
Voltage - Collector Emitter Breakdown (Max)80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

3D models and CAD resources for this part