2SD1005-T1-AY

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Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSISTORS

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Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSISTORS

Technical Specifications

Parameters and characteristics for this part

Specification	2SD1005-T1-AY

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	90 hFE
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-243AA
Power - Max [Max]	2 W
Supplier Device Package	SC-62
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Small Signal Bipolar Transistors

Part	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Transistor Type	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic
Renesas Electronics Corporation 2SD1005-T1-AY	TO-243AA	-55 °C	150 °C	Surface Mount	90 hFE	100 nA	NPN	2 W	1 A	SC-62	80 V	500 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1007	$ 0.30

General part information

Small Signal Bipolar Transistors

Technical documentation and resources