NXH020F120MNF1PG
ActiveON Semiconductor
SILICON CARBIDE MOSFET, FULL BRIDGE, DUAL N CHANNEL, 51 A, 1.2 KV, 0.02 OHM, MODULE
NXH020F120MNF1PG
ActiveON Semiconductor
SILICON CARBIDE MOSFET, FULL BRIDGE, DUAL N CHANNEL, 51 A, 1.2 KV, 0.02 OHM, MODULE
Description
General part information
NXH020F120MNF1PG
The NXH020F120MNF1 is a SiC MOSFET module containing a 20 mohm SiC MOSFET full bridge and an NTC thermistor in an F1 module.
Technical Specifications
Parameters and characteristics for this part
| Specification | NXH020F120MNF1PG |
|---|---|
| Channel Count | 4 |
| Configuration | N-Channel |
| Configuration - Features | Full Bridge |
| Current - Continuous Drain (Id) (Tc) | 51 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Max) | 213.5 nC |
| Input Capacitance (Ciss) (Max) | 2420 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | Module |
| Package Length | 33.8 mm |
| Package Name | 22-PIM |
| Package Width | 42.5 mm |
| Power - Max (Tj) | 119 W |
| Rds On (Max) | 30 mOhm |
| Technology | Silicon Carbide (SiC) |
| Vgs(th) (Max) | 4.3 V |
Pricing
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