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Description

General part information

2N3417

Bipolar (BJT) Transistor NPN 50 V 500 mA 625 mW Through Hole TO-92-3

Technical Specifications

Parameters and characteristics for this part

Specification2N3417
Current - Collector (Ic) (Max)500 mA
Current - Collector Cutoff (Max)100 nA
DC Current Gain (hFE) (Min)180
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Package NameTO-92-3
Power - Max625 mW
Transistor TypeNPN
Vce Saturation (Max)300 mV
Voltage - Collector Emitter Breakdown (Max)50 V

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