SGS10N60RUFDTU
ObsoleteON Semiconductor
IGBT, 600V, 10A, SHORT CIRCUIT RATED
SGS10N60RUFDTU
ObsoleteON Semiconductor
IGBT, 600V, 10A, SHORT CIRCUIT RATED
Description
General part information
SGS10N60RUFDTU
ON Semiconductor’s RUFD series of Insulated Gate Bipolar Transistors(IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, UPS and general inverters where short circuit ruggedness is a required feature.
Technical Specifications
Parameters and characteristics for this part
| Specification | SGS10N60RUFDTU |
|---|---|
| Current - Collector (Ic) (Max) | 16 A |
| Current - Collector Pulsed (Icm) | 30 A |
| Gate Charge | 30 nC |
| Input Type | Standard |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-220-3 Full Pack |
| Package Name | TO-220F-3 |
| Power - Max | 55 W |
| Reverse Recovery Time (trr) | 60 ns |
| Switching Energy (Off) | 215 µJ |
| Switching Energy (On) | 141 µJ |
| Td (off) @ 25°C | 36 ns |
| Td (on) @ 25°C | 15 ns |
| Test Condition Current | 10 A |
| Test Condition Resistance | 20 Ohm |
| Test Condition Voltage | 300 V |
| Test Condition Voltage (Secondary) | 15 V |
| Vce(on) (Max) | 2.8 V |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
Pricing
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