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ONSEMI NXV04V120DB1

NXV04V120DB1

Obsolete
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, SIX N CHANNEL, 160 A, 40 V, 0.0019 OHM, 10 V, 4 V

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ONSEMI NXV04V120DB1

NXV04V120DB1

Obsolete
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, SIX N CHANNEL, 160 A, 40 V, 0.0019 OHM, 10 V, 4 V

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Description

General part information

NXV04V120DB1

The NXV04V120DB1 is an 40V low Rds(on) automotive qualified power integrated module featuring a 3-phase MOSFET bridge optimized for Automotive 12V Motor inverter system, It includes a precision shunt resistor for current sensing, an NTC for temperature sensing, and an RC snubber circuit. The module utilizes ON’s trench MOSFET technology and it is designed to provide a very compact solution for the system. The Power module is 100% lead free, RoHs and UL compliant.

Technical Specifications

Parameters and characteristics for this part

SpecificationNXV04V120DB1
Channel Count3
ConfigurationPhase Inverter
Current160 A
GradeAutomotive
Mounting TypeThrough Hole
Package Length1.48 in
Package Name19-PowerDIP Module
Package Width37.6 mm
TypeMOSFET
Voltage40 V
Voltage - Isolation2500 Vrms

Pricing

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CAD

3D models and CAD resources for this part