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Description

General part information

BC638TF

Bipolar (BJT) Transistor PNP 60 V 1 A 100MHz 1 W Through Hole TO-92-3

Technical Specifications

Parameters and characteristics for this part

SpecificationBC638TF
Current - Collector (Ic) (Max)1 A
Current - Collector Cutoff (Max)100 nA
DC Current Gain (hFE) (Min)40
Frequency - Transition100 MHz
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-92-3 (TO-226AA) Formed Leads, TO-226-3
Package NameTO-92-3
Power - Max1 VA
Transistor TypePNP
Vce Saturation (Max)500 mV
Voltage - Collector Emitter Breakdown (Max)60 V

Pricing

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CAD

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