
FDP038AN06A0-F102
ActiveON Semiconductor
N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 60V, 80A, 3.8MΩ

FDP038AN06A0-F102
ActiveON Semiconductor
N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 60V, 80A, 3.8MΩ
Description
General part information
FDP038AN06A0-F102
N-Channel 60 V 80A (Tc) 310W (Tc) Through Hole TO-220-3
Technical Specifications
Parameters and characteristics for this part
| Specification | FDP038AN06A0-F102 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 80 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On) | 6 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 124 nC |
| Input Capacitance (Ciss) (Max) | 6400 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-220-3 |
| Package Name | TO-220-3 |
| Power Dissipation (Max) | 310 W |
| Rds On (Max) | 3.8 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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