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488-TO-220AB

FDP038AN06A0-F102

Active
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 60V, 80A, 3.8MΩ

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488-TO-220AB

FDP038AN06A0-F102

Active
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 60V, 80A, 3.8MΩ

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Description

General part information

FDP038AN06A0-F102

N-Channel 60 V 80A (Tc) 310W (Tc) Through Hole TO-220-3

Technical Specifications

Parameters and characteristics for this part

SpecificationFDP038AN06A0-F102
Current - Continuous Drain (Id) (Tc)80 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On)6 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)124 nC
Input Capacitance (Ciss) (Max)6400 pF
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-220-3
Package NameTO-220-3
Power Dissipation (Max)310 W
Rds On (Max)3.8 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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CAD

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