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S1JB R5G - DO214

S1JB R5G

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Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A DO214AA

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S1JB R5G - DO214

S1JB R5G

Unknown
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A DO214AA

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationS1JB R5G
Current - Average Rectified (Io)1 A
Current - Reverse Leakage @ Vr5 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseSMB, DO-214AA
SpeedStandard Recovery >500ns
Speed200 mA
Supplier Device PackageSMB
Supplier Device PackageDO-214AA
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]600 V
Voltage - Forward (Vf) (Max) @ If1.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

S1J Series

Diode 600 V 1A Surface Mount DO-214AA (SMB)

Documents

Technical documentation and resources