K4F6E3S4HM-MGCJ
ActiveSamsung Semiconductor, Inc.
LPDDR4 16GB X32 3733 MBPS 1.1V
K4F6E3S4HM-MGCJ
ActiveSamsung Semiconductor, Inc.
LPDDR4 16GB X32 3733 MBPS 1.1V
Description
General part information
K4F6E3S4HM-MGCJ
Memory IC 16Gbit Parallel 1866 MHz
Technical Specifications
Parameters and characteristics for this part
| Specification | K4F6E3S4HM-MGCJ |
|---|---|
| Clock Frequency | 1866 MHz |
| Memory Depth | 512 M |
| Memory Format | DRAM |
| Memory Interface (Type) | Parallel |
| Memory Size | 2 GByte |
| Memory Type | Volatile |
| Memory Width | 32 bit |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 85 °C |
| Operating Temperature (Min) | -25 °C |
| Package / Case | 200-TFBGA |
| Voltage - Supply | 1.1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
No documents available