NVMYS029N08LHTWG
ActiveON Semiconductor
MOSFET - POWER, SINGLE N-CHANNEL, 80 V, 29 MΩ, 22 A
NVMYS029N08LHTWG
ActiveON Semiconductor
MOSFET - POWER, SINGLE N-CHANNEL, 80 V, 29 MΩ, 22 A
Description
General part information
NVMYS029N08LHTWG
Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. Gullwing device to achieve improved Board Level Reliability performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | NVMYS029N08LHTWG |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 7 A |
| Current - Continuous Drain (Id) (Tc) | 22 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 9 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 431 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 4-LFPAK, SOT-1023 |
| Package Length | 5 mm |
| Package Name | LFPAK4 |
| Package Width | 6 mm |
| Power Dissipation (Max) | 3.5 W, 33 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 29 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2 V |
Pricing
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