
TSM1NB60CW
ActiveTaiwan Semiconductor Corporation
600V, 0.7A, SINGLE N-CHANNEL HIGH VOLTAGE MOSFETS

TSM1NB60CW
ActiveTaiwan Semiconductor Corporation
600V, 0.7A, SINGLE N-CHANNEL HIGH VOLTAGE MOSFETS
Description
General part information
TSM1NB60CW
600V, 0.7A, SINGLE N-CHANNEL HIGH VOLTAGE MOSFETS
Technical Specifications
Parameters and characteristics for this part
| Specification | TSM1NB60CW |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 1 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 6.1 nC |
| Input Capacitance (Ciss) (Max) | 138 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Package Name | SOT-223 |
| Power Dissipation (Max) | 2.1 W |
| Rds On (Max) | 10 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 4.5 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
AN-1011 PerFET MOSFET Advantage Introduction
SOT-223 - Packing Information
Whisker - SOT-223 REV:A
AN-1001 Understanding Power MOSFET Parameters
TSM1NB60CW - Datasheet
MKT-SOT223 HQ2SD07-SOT223-001 REV A
TSM1NB60CW - FIT MTTF Report
AN-1002 How to Check SOA of MOSFET
TSM1NB60CW - Material Composition Declaration
DECLARATION_LETTER_-_PRODUCT_SHELF_LIFE_REVB