IRFR3709ZTRLPBF

Infineon Technologies

MOSFET N-CH 30V 86A DPAK

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Infineon Technologies

MOSFET N-CH 30V 86A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	IRFR3709ZTRLPBF

Current - Continuous Drain (Id) @ 25°C	86 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	26 nC
Input Capacitance (Ciss) (Max) @ Vds	2330 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	79 W
Rds On (Max) @ Id, Vgs	6.5 mOhm
Supplier Device Package	TO-252AA (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.25 V

Part	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	FET Type	Package / Case	Vgs(th) (Max) @ Id
Infineon Technologies IRFR3709ZTRLPBF	6.5 mOhm	4.5 V 10 V	86 A	2330 pF	MOSFET (Metal Oxide)	20 V	30 V	26 nC	79 W	TO-252AA (DPAK)	-55 °C	175 ░C	Surface Mount	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	2.25 V
Infineon Technologies IRFR3709ZTRPBF	6.5 mOhm	4.5 V 10 V	86 A	2330 pF	MOSFET (Metal Oxide)	20 V	30 V	26 nC	79 W	TO-252AA (DPAK)	-55 °C	175 ░C	Surface Mount	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	2.25 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 86A (Tc) 79W (Tc) Surface Mount TO-252AA (DPAK)

Technical documentation and resources