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HMHA2801AV

HMHA2801AV

Active
ON Semiconductor

4-PIN HALF-PITCH MINI-FLAT PHOTOTRANSISTOR OPTOCOUPLERS <SUB>(NOT RECOMMEND FOR NEW DESIGN. THE NEW EQUIVALENT PART NUMBER IS FODM217X)</SUB>

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HMHA2801AV

HMHA2801AV

Active
ON Semiconductor

4-PIN HALF-PITCH MINI-FLAT PHOTOTRANSISTOR OPTOCOUPLERS <SUB>(NOT RECOMMEND FOR NEW DESIGN. THE NEW EQUIVALENT PART NUMBER IS FODM217X)</SUB>

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Description

General part information

HMHA2801AV

The HMHA281 and HMHA2801 series devices consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a compact 4-pin mini-flat package. The lead pitch is 1.27 mm.

Technical Specifications

Parameters and characteristics for this part

SpecificationHMHA2801AV
Current - DC Forward (If) (Max)50 mA
Current - Output / Channel50 mA
Current Transfer Ratio (Max)160 %
Current Transfer Ratio (Min)80 %
Fall Time (Typ)3 µs
Input TypeDC
Mounting TypeSurface Mount
Number of Channels1
Operating Temperature (Max)100 °C
Operating Temperature (Min)-55 °C
Output TypeTransistor
Package Length0.173 in
Package Name4-Mini-Flat, 4-SOIC
Package Width4.4 mm
Rise Time (Typ)3 µs
Vce Saturation (Max)300 mV
Voltage - Forward (Vf) (Max)1.3 V
Voltage - Isolation3750 VDC
Voltage - Output (Max)80 V

Pricing

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CAD

3D models and CAD resources for this part