STW47NM60ND

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STMicroelectronics

MOSFET N-CH 600V 35A TO247

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STMicroelectronics

MOSFET N-CH 600V 35A TO247

Technical Specifications

Parameters and characteristics for this part

Specification	STW47NM60ND

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	120 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	4200 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Power Dissipation (Max)	255 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	88 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

MOSFET N-CH 600V 35A TO247

Part	Operating Temperature	Package / Case	Drain to Source Voltage (Vdss)	FET Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Grade	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Vgs(th) (Max) @ Id	Technology	Qualification	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)
STMicroelectronics STW47NM60ND	150 °C	TO-247-3	600 V	N-Channel	88 mOhm	120 nC	TO-247-3	Automotive	10 V	25 V	5 V	MOSFET (Metal Oxide)	AEC-Q101	4200 pF	Through Hole	35 A	255 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 35A (Tc) 255W (Tc) Through Hole TO-247-3

Technical documentation and resources

No documents available