DMT47M2SFVW-13
ActiveDiodes Inc
40V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
DMT47M2SFVW-13
ActiveDiodes Inc
40V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Description
General part information
DMT47M2SFVW-13
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | DMT47M2SFVW-13 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 15.4 A |
| Current - Continuous Drain (Id) (Tc) | 49.1 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 12.1 nC |
| Input Capacitance (Ciss) (Max) | 897 pF |
| Mounting Type | Wettable Flank, Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerVDFN |
| Package Name | PowerDI3333-8 (SWP) Type UX |
| Power Dissipation (Max) | 27.1 W, 2.67 W |
| Rds On (Max) | 7.5 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
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Documents
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