Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
General part information
The STTH12R06, which is using ST Turbo 2 600V technology, is specially suited as boost diode in continuous mode power factor corrections and hard switching conditions.
This device is also intended for use as a free wheeling diode in power supplies and other power switching applications.
Parameters and characteristics commom to parts in this series
| Specification | STTH12R06D | STTH12R06 Series |
|---|---|---|
| Current - Average Rectified (Io) | 12 A | 12 A |
| Current - Reverse Leakage @ Vr | 45 µA | 45 µA |
| Mounting Type | Through Hole | Surface Mount, Through Hole |
| Operating Temperature - Junction [Max] | 175 °C | 175 °C |
| Package / Case | TO-220-2 | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3, TO-220-2 |
| Reverse Recovery Time (trr) | 45 ns | 45 ns |
| Speed | 200 mA, 500 ns | 200 - 500 mA |
| Supplier Device Package | TO-220AC | D2PAK, TO-220AC |
| Technology | Standard | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 600 V | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 2.9 V | 2.9 V |
600 V, 12 A Turbo 2 Ultrafast Diode
| Part | Voltage - DC Reverse (Vr) (Max) [Max] | Reverse Recovery Time (trr) | Package / Case | Current - Reverse Leakage @ Vr | Technology | Supplier Device Package | Voltage - Forward (Vf) (Max) @ If | Mounting Type | Operating Temperature - Junction [Max] | Current - Average Rectified (Io) | Speed |
|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics STTH12R06G-TR | 600 V | 45 ns | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB | 45 µA | Standard | D2PAK | 2.9 V | Surface Mount | 175 °C | 12 A | 200 mA, 500 ns |
STMicroelectronics STTH12R06D | 600 V | 45 ns | TO-220-2 | 45 µA | Standard | TO-220AC | 2.9 V | Through Hole | 175 °C | 12 A | 200 mA, 500 ns |
STMicroelectronics STTH12R06G | 600 V | 45 ns | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB | 45 µA | Standard | D2PAK | 2.9 V | Surface Mount | 175 °C | 12 A | 200 mA, 500 ns |
