NGTB40N65FL2WG
ActiveIGBT SINGLE TRANSISTOR, 80 A, 1.7 V, 366 W, 650 V, TO-247, 3 ROHS COMPLIANT: YES
NGTB40N65FL2WG
ActiveIGBT SINGLE TRANSISTOR, 80 A, 1.7 V, 366 W, 650 V, TO-247, 3 ROHS COMPLIANT: YES
Description
General part information
NGTB40N65FL2WG
This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softand fast co−packaged free wheeling diode with a low forward voltage.
Technical Specifications
Parameters and characteristics for this part
| Specification | NGTB40N65FL2WG |
|---|---|
| Current - Collector (Ic) (Max) | 80 A |
| Current - Collector Pulsed (Icm) | 160 A |
| Gate Charge | 170 nC |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247-3 |
| Power - Max | 366 W |
| Reverse Recovery Time (trr) | 72 ns |
| Switching Energy (Off) | 440 µJ |
| Switching Energy (On) | 970 µJ |
| Td (off) @ 25°C | 177 ns |
| Td (on) @ 25°C | 84 ns |
| Test Condition Current | 40 A |
| Test Condition Resistance | 10 Ohm |
| Test Condition Voltage | 400 V |
| Test Condition Voltage (Secondary) | 15 V |
| Vce(on) (Max) | 2 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
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CAD
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