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NTMFD030N06CT1G

NTMFD030N06CT1G

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ON Semiconductor

POWER MOSFET POWER, N-CHANNEL, DUAL SO8FL, 60 V, 29.7 MΩ, 19 A

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NTMFD030N06CT1G

NTMFD030N06CT1G

Active
ON Semiconductor

POWER MOSFET POWER, N-CHANNEL, DUAL SO8FL, 60 V, 29.7 MΩ, 19 A

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Description

General part information

NTMFD030N06CT1G

Industrial Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance.

Technical Specifications

Parameters and characteristics for this part

SpecificationNTMFD030N06CT1G
Channel Count2
ConfigurationN-Channel
Configuration - FeaturesDual
Current - Continuous Drain (Id) (Ta)7 A
Current - Continuous Drain (Id) (Tc)19 A
Drain to Source Voltage (Vdss)60 V
Gate Charge (Max)4.7 nC
Input Capacitance (Ciss) (Max)255 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerTDFN
Package Length (8-DFN)5 mm
Package NameDual Flag, 8-DFN, SO8FL-Dual
Package Width (8-DFN)6 mm
Power - Max (Ta)3.2 W
Power - Max (Tc)23 W
Rds On (Max)29.7 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max)4 V

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CAD

3D models and CAD resources for this part