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BS250P

BS250P

LTB
Diodes Inc

P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Find alt
BS250P

BS250P

LTB
Diodes Inc

P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Find alt

Description

General part information

BS250P

P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Technical Specifications

Parameters and characteristics for this part

SpecificationBS250P
Current - Continuous Drain (Id) (Ta)230 mA
Drain to Source Voltage (Vdss)45 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeP-Channel
Input Capacitance (Ciss) (Max)60 pF
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Package NameTO-92
Power Dissipation (Max)700 mW
Rds On (Max)14 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.5 V

Pricing

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CAD

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Documents

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