
BS250P
LTBDiodes Inc
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

BS250P
LTBDiodes Inc
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
Description
General part information
BS250P
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
Technical Specifications
Parameters and characteristics for this part
| Specification | BS250P |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 230 mA |
| Drain to Source Voltage (Vdss) | 45 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) | 60 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Package Name | TO-92 |
| Power Dissipation (Max) | 700 mW |
| Rds On (Max) | 14 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.5 V |
Pricing
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CAD
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Documents
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