DMTH8003SPSWQ-13
ActiveDiodes Inc
80V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
DMTH8003SPSWQ-13
ActiveDiodes Inc
80V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Description
General part information
DMTH8003SPSWQ-13
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | DMTH8003SPSWQ-13 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 105 A, 105 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On) | 6 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 136 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 9081 pF |
| Mounting Type | Wettable Flank, Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PowerDI5060-8 (Type UX) |
| Power Dissipation (Max) | 3.75 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 3.9 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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