DMG9933USD-13

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Diodes Inc

TRANSISTOR MOSFET ARRAY DUAL P-CH 20V 4.6A 8-PIN SOIC T/R

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Diodes Inc

TRANSISTOR MOSFET ARRAY DUAL P-CH 20V 4.6A 8-PIN SOIC T/R

Technical Specifications

Parameters and characteristics for this part

Specification	DMG9933USD-13

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	4.6 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	6.5 nC
Input Capacitance (Ciss) (Max) @ Vds	608.4 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	1.15 W
Rds On (Max) @ Id, Vgs	75 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.1 V

Dual P-Channel Enhancement Mode MOSFET

Part	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	FET Feature	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Package / Case [y]	Package / Case [x]	Configuration	Supplier Device Package	Power - Max [Max]	Technology
Diodes Inc DMG9933USD-13	-55 °C	150 °C	4.6 A	1.1 V	75 mOhm	Surface Mount	6.5 nC	20 V	Logic Level Gate	608.4 pF	8-SOIC	3.9 mm	0.154 in	2 P-Channel	8-SO	1.15 W	MOSFET (Metal Oxide)

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General part information

Dual P-Channel Enhancement Mode MOSFET

Technical documentation and resources