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X28HC256PZ-12 - 28DPID

X28HC256PZ-12

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Renesas Electronics Corporation

256K, 32K X 8 BIT; 5 VOLT, BYTE ALTERABLE EEPROM

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X28HC256PZ-12 - 28DPID

X28HC256PZ-12

Active
Renesas Electronics Corporation

256K, 32K X 8 BIT; 5 VOLT, BYTE ALTERABLE EEPROM

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DocumentsDatasheet

Technical Specifications

Parameters and characteristics commom to parts in this series

SpecificationX28HC256PZ-12X28HC256 Series
Access Time-90 - 150 ns
Memory FormatEEPROMEEPROM
Memory InterfaceParallelParallel
Memory Organization32K x 832K x 8
Memory Size32 KB32 KB
Memory Type-Non-Volatile
Mounting Type-Surface Mount
Operating Temperature-70 - 85 °C
Operating Temperature--40 - 0 °C
Package / Case-32-LCC (J-Lead), 28-SOIC
Package / Case-0.295 in
Package / Case-7.5 mm
Supplier Device Package28-PDIP32-PLCC, 28-PDIP, 28-SOIC
Supplier Device Package-11.43
Supplier Device Package-13.97
Technology-EEPROM
Voltage - Supply-4.5 V
Voltage - Supply-5.5 V
Write Cycle Time - Word, Page-5 ms

X28HC256 Series

256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM

PartMounting TypeAccess TimePackage / CaseMemory TypeOperating Temperature [Max]Operating Temperature [Min]Memory FormatSupplier Device PackageSupplier Device Package [y]Supplier Device Package [x]Memory InterfaceWrite Cycle Time - Word, PageMemory SizeMemory OrganizationTechnologyVoltage - Supply [Min]Voltage - Supply [Max]Package / Case [x]Package / Case [y]
Renesas Electronics Corporation
X28HC256JIZ-12
Surface Mount
120 ns
32-LCC (J-Lead)
Non-Volatile
85 °C
-40 °C
EEPROM
32-PLCC
11.43
13.97
Parallel
5 ms
32 KB
32K x 8
EEPROM
4.5 V
5.5 V
Renesas Electronics Corporation
X28HC256JIZ-90
Surface Mount
90 ns
32-LCC (J-Lead)
Non-Volatile
85 °C
-40 °C
EEPROM
32-PLCC
11.43
13.97
Parallel
5 ms
32 KB
32K x 8
EEPROM
4.5 V
5.5 V
Renesas Electronics Corporation
X28HC256PZ-15
EEPROM
28-PDIP
Parallel
32 KB
32K x 8
Renesas Electronics Corporation
X28HC256JI-90R5697
Surface Mount
90 ns
32-LCC (J-Lead)
Non-Volatile
85 °C
-40 °C
EEPROM
32-PLCC
11.43
13.97
Parallel
5 ms
32 KB
32K x 8
EEPROM
4.5 V
5.5 V
Renesas Electronics Corporation
X28HC256JIZ-90T1
Surface Mount
90 ns
32-LCC (J-Lead)
Non-Volatile
85 °C
-40 °C
EEPROM
32-PLCC
11.43
13.97
Parallel
5 ms
32 KB
32K x 8
EEPROM
4.5 V
5.5 V
Renesas Electronics Corporation
X28HC256JI-90R5699
Surface Mount
90 ns
32-LCC (J-Lead)
Non-Volatile
85 °C
-40 °C
EEPROM
32-PLCC
11.43
13.97
Parallel
5 ms
32 KB
32K x 8
EEPROM
4.5 V
5.5 V
Renesas Electronics Corporation
X28HC256SIZ-90
Surface Mount
90 ns
28-SOIC
Non-Volatile
85 °C
-40 °C
EEPROM
28-SOIC
Parallel
5 ms
32 KB
32K x 8
EEPROM
4.5 V
5.5 V
0.295 in
7.5 mm
Renesas Electronics Corporation
X28HC256J-90
Surface Mount
90 ns
32-LCC (J-Lead)
Non-Volatile
70 °C
0 °C
EEPROM
32-PLCC
11.43
13.97
Parallel
5 ms
32 KB
32K x 8
EEPROM
4.5 V
5.5 V
Renesas Electronics Corporation
X28HC256PZ-12
EEPROM
28-PDIP
Parallel
32 KB
32K x 8
Renesas Electronics Corporation
X28HC256JZ-15T1
Surface Mount
150 ns
32-LCC (J-Lead)
Non-Volatile
70 °C
0 °C
EEPROM
32-PLCC
11.43
13.97
Parallel
5 ms
32 KB
32K x 8
EEPROM
4.5 V
5.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 208$ 43.03

Description

General part information

X28HC256 Series

The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing a 24μs/byte write cycle, and enabling the entire memory to be typically rewritten in less than 0. 8s. The X28HC256 also features DATA polling and Toggle bit polling, two methods of providing early end of write detection. The X28HC256 also supports the JEDEC standard software data protection feature for protecting against inadvertent writes during power-up and power-down. Endurance for the X28HC256 is specified as a minimum 100, 000 write cycles per byte and an inherent data retention of 100 years

Documents

Technical documentation and resources