NVMFD5853NLT1G
ObsoleteON Semiconductor
DUAL N−CHANNEL LOGIC LEVEL POWER MOSFET 40V, 34A, 10MΩ
NVMFD5853NLT1G
ObsoleteON Semiconductor
DUAL N−CHANNEL LOGIC LEVEL POWER MOSFET 40V, 34A, 10MΩ
Description
General part information
NVMFD5853NLT1G
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | NVMFD5853NLT1G |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel |
| Configuration - Features | Dual |
| Current - Continuous Drain (Id) | 12 A |
| Drain to Source Voltage (Vdss) | 40 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Max) | 23 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 1100 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Length (8-DFN) | 5 mm |
| Package Name | Dual Flag, 8-DFN, SO8FL-Dual |
| Package Width (8-DFN) | 6 mm |
| Power - Max | 3 VA |
| Qualification | AEC-Q101 |
| Rds On (Max) | 10 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 2.4 V |
Pricing
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