
SCS304APC9
ObsoleteRohm Semiconductor
DIODE SILICON CARBIDE 650V 4A

SCS304APC9
ObsoleteRohm Semiconductor
DIODE SILICON CARBIDE 650V 4A
Description
General part information
SCS304APC9
DIODE SILICON CARBIDE 650V 4A
Technical Specifications
Parameters and characteristics for this part
| Specification | SCS304APC9 |
|---|---|
| Capacitance | 200 pF |
| Current - Average Rectified (Io) | 4 A |
| Current - Reverse Leakage | 20 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction (Max) | 175 °C |
| Package / Case | TO-220-2 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Speed - Fast Recovery (Minimum) | 500 mA |
| Speed - Recovery Current | 500 mA, 500 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) | 1.5 V |
Pricing
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CAD
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