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Description

General part information

TK12A50E,S5X

MOSFET N-CH 500V 12A TO220SIS

Technical Specifications

Parameters and characteristics for this part

SpecificationTK12A50E,S5X
Current - Continuous Drain (Id) (Ta)12 A
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)40 nC
Input Capacitance (Ciss) (Max)1300 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-220-3 Full Pack
Package NameTO-220SIS
Power Dissipation (Max)45 W
Rds On (Max)520 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)4 V

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CAD

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Documents

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    TK12A50E,S5X | Toshiba Semiconductor and Storage | Zenode.ai