Description
General part information
IPD047N03LF2SATMA1
Infineon’s StrongIRFET™ 2 power MOSFET 30 V technology features a best-in-class RDS(on)of 4.7 mOhm in a DPAK package. This product addresses a broad range of applications from low- to high-switching frequency. Compared to the previous technology, the IPD047N03LF2S achieves up to 40% RDS(on)improvement while having up to 60% FOM enhancement and excellent robustness.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPD047N03LF2SATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 71 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 32 nC |
| Input Capacitance (Ciss) (Max) | 1400 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | PG-TO252-3 |
| Power Dissipation (Max) | 65 W |
| Rds On (Max) | 4.7 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.35 V |
Pricing
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