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XP3N020YT

XP3N020YT

Active
YAGEO

MOSFET N-CH 30V 10A PMPAK

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XP3N020YT

XP3N020YT

Active
YAGEO

MOSFET N-CH 30V 10A PMPAK

Find alt

Description

General part information

XP3N020YT

MOSFET N-CH 30V 10A PMPAK

Technical Specifications

Parameters and characteristics for this part

SpecificationXP3N020YT
Current - Continuous Drain (Id) (Ta)10 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)8.5 nC
Input Capacitance (Ciss) (Max)880 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerTDFN, 8-PowerDFN
Package Length3 mm
Package NamePMPAK®
Package Width3 mm
Power Dissipation (Max)3.12 W
Rds On (Max)20 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3 V

Pricing

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CAD

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Documents

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