DMC1030UFDBQ-7
NRNDDiodes Inc
NRND = NOT RECOMMENDED FOR NEW DESIGN
DMC1030UFDBQ-7
NRNDDiodes Inc
NRND = NOT RECOMMENDED FOR NEW DESIGN
Description
General part information
DMC1030UFDBQ-7
This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP.
Technical Specifications
Parameters and characteristics for this part
| Specification | DMC1030UFDBQ-7 |
|---|---|
| Configuration | P-Channel Complementary, N |
| Current - Continuous Drain (Id) | 5.1 A |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Max) | 23.1 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 1003 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 6-UDFN Exposed Pad |
| Package Name | U-DFN2020-6 (Type B) |
| Power - Max | 1.36 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 34 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 1 V |
Pricing
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CAD
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Documents
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