FCP20N60
ActivePOWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP>, EASY DRIVE, 600 V, 20 A, 190 MΩ, TO-220
FCP20N60
ActivePOWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP>, EASY DRIVE, 600 V, 20 A, 190 MΩ, TO-220
Description
General part information
FCP20N60
SuperFET® MOSFET is ON Semiconductor Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | FCP20N60 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 20 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 98 nC |
| Input Capacitance (Ciss) (Max) | 3080 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-220-3 |
| Package Name | TO-220-3 |
| Power Dissipation (Max) | 208 W |
| Rds On (Max) | 190 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 5 V |
Pricing
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