FDN5618P-B8
ObsoleteON Semiconductor
FET -60V 1.7 MOHM SSOT3
FDN5618P-B8
ObsoleteON Semiconductor
FET -60V 1.7 MOHM SSOT3
Description
General part information
FDN5618P-B8
P-Channel 60 V 1.25A (Ta) 460mW (Ta) Surface Mount SuperSOT™-3
Technical Specifications
Parameters and characteristics for this part
| Specification | FDN5618P-B8 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 1.25 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 13.8 nC |
| Input Capacitance (Ciss) (Max) | 430 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-236-3, SOT-23-3, SC-59 |
| Package Name | SuperSOT™-3 |
| Power Dissipation (Max) | 460 mW |
| Rds On (Max) | 170 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3 V |
Pricing
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