Specification	GT1K2N10I

Current - Continuous Drain (Id) (Tc)	3.3 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	10 V, 4.5 V
Drive Voltage (Min Rds On)	4.5 V, 10 V
FET Type	N-Channel
Gate Charge (Max)	4.2 nC
Input Capacitance (Ciss) (Max)	145 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	SOT-23, SOT-23-3
Power Dissipation (Max)	1.6 W, 1.6 W
Rds On (Max)	110 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.2 V

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