
RGTVX2TS65GC11
NRNDRohm Semiconductor
IGBT TRENCH FS 650V 111A TO-247N

RGTVX2TS65GC11
NRNDRohm Semiconductor
IGBT TRENCH FS 650V 111A TO-247N
Description
General part information
RGTVX2TS65GC11
IGBT TRENCH FS 650V 111A TO-247N
Technical Specifications
Parameters and characteristics for this part
| Specification | RGTVX2TS65GC11 |
|---|---|
| Current - Collector (Ic) (Max) | 111 A |
| Current - Collector Pulsed (Icm) | 240 A |
| Gate Charge | 123 nC |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247N |
| Power - Max | 319 W |
| Switching Energy (Off) | 1.15 mJ |
| Switching Energy (On) | 2.08 mJ |
| Td (off) @ 25°C | 150 ns |
| Td (on) @ 25°C | 49 ns |
| Test Condition Current | 60 A |
| Test Condition Resistance | 10 Ohm |
| Test Condition Voltage | 400 V |
| Test Condition Voltage (Secondary) | 15 V |
| Vce(on) (Max) | 1.9 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
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