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Description

General part information

RSQ030P03TR

MOSFET P-CH 30V 3A TSMT6

Technical Specifications

Parameters and characteristics for this part

SpecificationRSQ030P03TR
Current - Continuous Drain (Id) (Ta)3 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On)4 V
Drive Voltage (Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Max)6 nC
Input Capacitance (Ciss) (Max)440 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTSOT-23-6, SOT-23-6 Thin
Package NameTSMT6 (SC-95)
Power Dissipation (Max)1.25 W
Rds On (Max)80 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.5 V

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