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BSM25GB120DN2

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INFINEON

IGBT MODULE

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BSM25GB120DN2

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INFINEON

IGBT MODULE

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Description

General part information

BSM25GB120DN2

IGBT Module Half Bridge 1200 V 38 A 200 W Chassis Mount Module

Technical Specifications

Parameters and characteristics for this part

SpecificationBSM25GB120DN2
ConfigurationHalf Bridge
Current - Collector (Ic) (Max)38 A
Current - Collector Cutoff (Max)800 µA
InputStandard
Input Capacitance (Cies) @ Vce1.65 nF
Mounting TypeChassis Mount
Operating Temperature150 °C
Package / CaseModule
Package NameModule
Power - Max200 W
Vce(on) (Max)3 V
Voltage - Collector Emitter Breakdown (Max)1200 V

Pricing

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