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Description

General part information

UPA2825T1S-E2-AT

MOSFET N-CH 30V 8HVSON

Technical Specifications

Parameters and characteristics for this part

SpecificationUPA2825T1S-E2-AT
Current - Continuous Drain (Id) (Tc)24 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)57 nC, 57 nC
Input Capacitance (Ciss) (Max)2600 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case8-PowerWDFN
Package Length3.3 mm
Package Name8-HWSON
Package Width3.3 mm
Power Dissipation (Max)1.5 W, 16.5 W
Rds On (Max)4.6 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V

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CAD

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