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IPP040N08NF2SAKMA1

IPP040N08NF2SAKMA1

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INFINEON

THE STRONGIRFET™ 2 SINGLE N-CHANNEL POWER MOSFET IPP040N08NF2S COMES IN A TO-220 PACKAGE.

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IPP040N08NF2SAKMA1

IPP040N08NF2SAKMA1

Active
INFINEON

THE STRONGIRFET™ 2 SINGLE N-CHANNEL POWER MOSFET IPP040N08NF2S COMES IN A TO-220 PACKAGE.

Find alt

Description

General part information

IPP040N08NF2SAKMA1

Infineon'sStrongIRFET™ 2power MOSFET 80 V features low RDS(on)of 4.0 mOhm, addressing a broad range of applications from low- to high-switching frequency.Compared to the previous technology the IPP040N08NF2S achieves 40 percent lower RDS(on)and 40 percent Qgimprovement.

Technical Specifications

Parameters and characteristics for this part

SpecificationIPP040N08NF2SAKMA1
Current - Continuous Drain (Id) (Ta)22 A
Current - Continuous Drain (Id) (Tc)115 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On)6 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)81 nC
Input Capacitance (Ciss) (Max)3800 pF
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-220-3
Package NamePG-TO220-3
Power Dissipation (Max)3.8 W, 150 W
Rds On (Max)4 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.8 V

Pricing

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CAD

3D models and CAD resources for this part