Description
General part information
FF4MR20KM1HHPSA1
SILICON CARBIDE MOSFET, HALF BRIDGE, DUAL N CHANNEL, 280 A, 2 KV, 0.0053 OHM, MODULE
Technical Specifications
Parameters and characteristics for this part
| Specification | FF4MR20KM1HHPSA1 |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel |
| Configuration - Features | Dual |
| Current - Continuous Drain (Id) (Tc) | 280 A |
| Drain to Source Voltage (Vdss) | 2000 V |
| Gate Charge (Max) | 1170 nC |
| Input Capacitance (Ciss) (Max) | 36100 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | Module |
| Package Name | AG-62MMHB |
| Rds On (Max) | 5.3 mOhm |
| Technology | Silicon Carbide (SiC) |
| Vgs(th) (Max) | 5.15 V |
Pricing
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