RF1S640SM
ActiveON Semiconductor
MOSFET N-CH 200V 18A TO263AB
RF1S640SM
ActiveON Semiconductor
MOSFET N-CH 200V 18A TO263AB
Description
General part information
RF1S640SM
MOSFET N-CH 200V 18A TO263AB
Technical Specifications
Parameters and characteristics for this part
| Specification | RF1S640SM |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 18 A |
| Drain to Source Voltage (Vdss) | 200 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 64 nC |
| Input Capacitance (Ciss) (Max) | 1275 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Package Name | TO-263AB |
| Power Dissipation (Max) | 125 W |
| Rds On (Max) | 180 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
No documents available