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ONSEMI BAS40LT1G

SMMBT4401LT1G

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ON Semiconductor

40 V, 600 MA NPN BIPOLAR JUNCTION TRANSISTOR

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ONSEMI BAS40LT1G

SMMBT4401LT1G

Active
ON Semiconductor

40 V, 600 MA NPN BIPOLAR JUNCTION TRANSISTOR

Find alt

Description

General part information

SMMBT4401LT1G

This 40 V, 600 mA NPN Bipolar Junction Transistor is designed for use in linear and switching applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications.

Technical Specifications

Parameters and characteristics for this part

SpecificationSMMBT4401LT1G
Current - Collector (Ic) (Max)0.6 mA
DC Current Gain (hFE) (Min)100
Frequency - Transition250 MHz
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-236-3, SOT-23-3, SC-59
Package NameSOT-23-3 (TO-236)
Power - Max300 mW
Transistor TypeNPN
Vce Saturation (Max)750 mV
Voltage - Collector Emitter Breakdown (Max)40 V

Pricing

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CAD

3D models and CAD resources for this part